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| sot- 3 23 plastic-encapsulate transistors 2sc1623 transistor (npn) features z high dc current gain :h fe =200(typ)v ce =6v, i c =1ma z high voltage:v ceo =50v maximum ratings ( t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 100 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 1 ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e = 100 a,i c =0 5 v collector cut-off current i cbo v cb = 60 v,i e =0 0.1 a emitter cut-off current i ebo v eb = 5 v,i c =0 0.1 a dc current gain h fe v ce = 6 v,i c = 1 ma 90 200 600 collector-emitter saturation voltage v ce(sat) i c = 100 ma,i b = 10 ma 0.3 v base-emitter saturation voltage v be(sat) i c = 100 ma,i b = 10 ma 1 v transition frequency f t v ce = 6 v,i c = 10 ma 250 mhz classification of h fe rank l4 l5 l6 l7 range 90-180 135-270 200-400 300-600 marking l4 l5 l6 l7 33333 so t - 323 1. base 2. emitter 3. collector 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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